Effect of bismuth on some physical properties of
Ge–Bi–Se thin films
Ge12BixSe88-x system (x = 3.5, 7, 10.5, 14, 17.5) was prepared by melt quenching technique using 99.999% purity of Ge, Se, and Bi. Thin films were deposited at room temperature on ultrasonically cleaned glass substrate by the pulse laser deposition [PLD] technique using Nd:YAG laser operated at the wavelength of 532 nm. The targets were put in a vacuum chamber at a background pressure of 5×10−4 torr with the laser power of 1.4 J. The pulse repetition rate was set at 10 Hz and the incidence angle was 45◦. The thickness of the films was measured using a stylus profiler.