5287
Hisham Ahmed Saleh Ahmed
Study the Effect of Ga content on the physical properties of thermally evaporated (Ge25-xGax Se75) thin films
Germanium Gallium selenide – Gallium selenide – Germanium selenide ( GeGaSe – GaSe – GeSe) thin films; Thermal evaporation techniques; X-Ray Diffraction (XRD);Scanning Electron Microscopy (SEM); Transmission Electron Microscopy (TEM); Differential scanning caliometry (DSC); Optical properties; Electrical Properties.
Ge25-xGaxSe75 bulk ingot materials with 5.97 ≤ x ≤ 23.95 were prepared by direct fusion of stoichiometric proportions of the constituent high purity elements in vacuum saled-silica tubes, following controlled heating and cooling stages. X-ray powder diffraction patterns indicates that for different values of x the materials corresponding to hexagonal phase is presentedNearly stoichiometric films with different x values were prepared by conventional thermal evaporation technique using molybdenium boats in 10-4 Pa with a deposition rate 1.8 nm/sec on optically flat glass substrates at 300 K. X-ray, transmission electron microscopy, electron diffraction, scanning electron microscopy and energy dispersive X-ray spectrometer were emplying to characterize the deposited films. The effect of annealing temperature in vacuum on the microstructure of the deposited films were investigated.
2016
Ph.d
Ain Shams
Science